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| TN5415A Discrete POWER & Signal Technologies TN5415A C TO-226 BE PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 200 200 4.0 100 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN5415A 1.0 8.0 125 50 Units W mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation TN5415A PNP High Voltage Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEX ICEO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I C = 50 mA, I B = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 175 V VCE = 200 V, VBE = 1.5 V (rev) VCE = 150 V VEB = 4.0 V, IC = 0 200 200 4.0 50 50 50 20 V V V A A A A ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 10 V, IC = 50 mA IC = 50 mA, IB = 5.0 mA IC = 50 mA, VCE = 10 V 30 150 2.5 1.5 V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz VEB = 5.0 V, f = 1.0 MHz I C = 5.0 mA, VCE = 10 V, f = 5.0 MHz I C = 5.0 mA, VCE = 10 V, f = 1.0 kHz VCE = 10 V, IC = 5.0 mA VCE = 100 V, t = 100 mS 3.0 25 300 100 mA 15 75 pF pF Re(hie) IS /b Input Resistance Safe Operating Area *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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